硅(gui)(gui)-藍(lan)(lan)紅(hong)原(yuan)(yuan)石由多晶硅(gui)(gui)電(dian)(dian)絕(jue)緣層體(ti)的(de)(de)(de)元素主成，是不(bu)會會會出現(xian)滯后性(xing)、疲(pi)憊和金屬疲(pi)勞(lao)表現(xian)；藍(lan)(lan)紅(hong)原(yuan)(yuan)石起著(zhu)(zhu)無比好的(de)(de)(de)回彈(dan)力和電(dian)(dian)絕(jue)緣層功能（1000℃范(fan)圍(wei)之內(nei)），對室內(nei)溫(wen)(wen)度轉變不(bu)神經(jing)皮(pi)膚(fu)刺(ci)激性(xing)，是在(zai)溫(wen)(wen)度前提下(xia)，也(ye)起著(zhu)(zhu)非常不(bu)錯的(de)(de)(de)運行功能；藍(lan)(lan)紅(hong)原(yuan)(yuan)石的(de)(de)(de)抗(kang)覆蓋功能較弱；別的(de)(de)(de)，硅(gui)(gui)-藍(lan)(lan)紅(hong)原(yuan)(yuan)石半導體(ti)材料神經(jing)皮(pi)膚(fu)刺(ci)激性(xing)電(dian)(dian)子器件(jian)，無p-n漂移(yi)，從而，可app于不(bu)同的(de)(de)(de)非常復雜環境(jing)(jing)環境(jing)(jing)。傳(chuan)紅(hong)外感應器器由雙膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)具(ju)有(you)：鈦(tai)鋁不(bu)銹(xiu)鋼(gang)(gang)在(zai)估(gu)測(ce)膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)和鈦(tai)鋁不(bu)銹(xiu)鋼(gang)(gang)閱讀(du)膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)。印(yin)有(you)異(yi)質概念性(xing)應力應變流暢電(dian)(dian)橋(qiao)三(san)極(ji)管的(de)(de)(de)藍(lan)(lan)紅(hong)原(yuan)(yuan)石膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)，被(bei)熔(rong)焊(han)在(zai)鈦(tai)鋁不(bu)銹(xiu)鋼(gang)(gang)在(zai)估(gu)測(ce)膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)上(shang)。被(bei)測(ce)壓(ya)傳(chuan)回到閱讀(du)膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)上(shang)。在(zai)壓(ya)的(de)(de)(de)效應下(xia)，鈦(tai)鋁不(bu)銹(xiu)鋼(gang)(gang)閱讀(du)膜(mo)(mo)(mo)(mo)片(pian)(pian)(pian)形成塑(su)性(xing)塑(su)性(xing)變形，該塑(su)性(xing)塑(su)性(xing)變形被(bei)硅(gui)(gui)-藍(lan)(lan)紅(hong)原(yuan)(yuan)石神經(jing)皮(pi)膚(fu)刺(ci)激性(xing)電(dian)(dian)子器件(jian)察覺后，其電(dian)(dian)橋(qiao)傷(shang)害會會會出現(xian)轉變，轉變的(de)(de)(de)幅度過與被(bei)測(ce)壓(ya)相等。電(dian)(dian)橋(qiao)三(san)極(ji)管將電(dian)(dian)橋(qiao)的(de)(de)(de)失(shi)去平衡數據(ju)，變換為電(dian)(dian)阻數據(ju)傷(shang)害。